VMFS5C404NAFT1G ON Semiconductor

NVMFS5C404NAFT1G , ON Semiconductor

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Spécifications techniques du produit

Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	MOSFET
RoHS
Forward Transconductance - Min	210 S
Rds On - Drain-Source Resistance	570 uOhms
Rise Time	113 ns
Fall Time	109 ns
Pd - Power Dissipation	200 W, 3.9 W
Product Type	MOSFET
Number Of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Qualification	AEC-Q101
Packaging	Cut Tape or Reel
Brand	ON Semiconductor
Configuration	Single
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	128 nC
Technology	Si
Id - Continuous Drain Current	378 A
Vds - Drain-Source Breakdown Voltage	40 V
Typical Turn-Off Delay Time	77 ns
Typical Turn-On Delay Time	16 ns
Factory Pack Quantity	1500
Subcategory	MOSFETs

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NVMFS5C404NAFT1G , ON Semiconductor