M170N06PQ56 RLG Taiwan Semiconductor

TSM170N06PQ56 RLG , Taiwan Semiconductor

Fabricant:	Taiwan Semiconductor
No de pièce du fabricant:	TSM170N06PQ56 RLG
Paquet:	PDFN56-8
RoHS:
Fiche technique:	PDF For TSM170N06PQ56 RLG
Description:	MOSFET 60V 44Amp 17mohm N channel Mosfet

Demande de devis In Stock: 379101

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Spécifications techniques du produit

Product Attribute	Attribute Value
Manufacturer	Taiwan Semiconductor
Product Category	MOSFET
RoHS
Rds On - Drain-Source Resistance	12 mOhms
Rise Time	19 ns
Fall Time	17 ns
Mounting Style	SMD/SMT
Pd - Power Dissipation	73.5 W
Product Type	MOSFET
Number Of Channels	1 Channel
Package / Case	PDFN56-8
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Packaging	Cut Tape or Reel
Brand	Taiwan Semiconductor
Configuration	Single
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	29 nC
Technology	Si
Id - Continuous Drain Current	8 A
Vds - Drain-Source Breakdown Voltage	60 V
Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	1.4 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs

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TSM170N06PQ56 RLG , Taiwan Semiconductor