Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 26.8 mOhms |
| Rise Time | 11 ns |
| Fall Time | 35 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.01 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PS-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Series | TPCP8107 |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | - 20 V, 10 V |
| Vgs Th - Gate-Source Threshold Voltage | - 2 V |
| Qg - Gate Charge | 44.6 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8 A |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Typical Turn-Off Delay Time | 150 ns |
| Typical Turn-On Delay Time | 29 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Tradename | U-MOSIV |
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